Performance of lrradiated p-channel 6H-SiC MOSFETs; High total dose

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

IEEE Transactions on Nuclear Science, 50(1), p.194 - 200, 2003/02

https://doi.org/10.1109/TNS.2002.807853

p-channel SiC MOSFETs were fabricated on n-type 6H-SiC epitaxial layer. The effects of -ray irradiation on the charecteristics of the MOSFETs were studied. Threshold voltage shifts to negative voltage side and the channel mobility reduces due to irradiation. Although the degradation of the channel mobility of the p-channel SiC MOSFETs is 10 times faster than n-channel SiC MOSFETs, p-channel SiC MOSFETs show 100 times stronger radiation resistance than Si MOSFETs. The values of interface traps and oxide-trapped-charge generated sue to irradiation were estimated from the subthreshold characteristics. As the result,it is concluded that the decrease in channel mobility can be explained by the generation of interface traps.